Overview:
- Bipolar junction transistor (BJT)
- Transistor polarity: NPN
- Configuration: Single
- VCEO : max. 230V
- VCBO : max. 230V
- VEBO : 5V
- Saturation voltage collector-emitter: 400 mV
- Collector direct current : max. 15A
- Bandwidth gain productfT : 30 MHz
- max. operating temperature: +150C
- hFE: 55 - 160
Scope of delivery:
- 1x transistor 2SC5200-O(Q)